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Data sheet, May 2009
Control integrated Power System (CIPOSTM)
IHCS22R60CE Two Phase Switched Reluctance Drives
Power Management & Drives
Never
stop
thinking.
CIPOSTM IHCS22R60CE
Control integrated Power System (CIPOSTM) Revision History: Previous Version: Page 6 2009-05 2.2 Subjects (major changes since last revision) Corrected section "Pin assignment" V 2.3
Author(s): O. Hellmund, W. Scholz, W. Frank, W. Brunnbauer Edition 2006-07 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/5/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Datasheet
2/16
Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE Table of contents:
Control integrated Power System...................................................................................................................4 Features .........................................................................................................................................................4 Typical Application .......................................................................................................................................4 Description ....................................................................................................................................................4 Internal Electrical Schematic...........................................................................................................................5 Pin Assignment.................................................................................................................................................6 Pin Description..............................................................................................................................................6 /AHIN, /ALIN, /BHIN and /BLIN (low side and high side control pins, Pin 17 - 20) .....................................6 EN (enable, Pin 23) .....................................................................................................................................7 VDD, VSS (control side supply and reference, Pin 22, 23).........................................................................7 GND_Rsh1 (low side anode - Shunt reference, Pin 15) and COM_Rsh2 (Shunt signal)...........................7 V+ (positive bus input voltage, Pin 10)........................................................................................................7 Rt (Temperature sense output) ...................................................................................................................7 Absolute Maximum Ratings ............................................................................................................................8 Module section ..............................................................................................................................................8 IGBT and Diode Section ...............................................................................................................................8 Control section..............................................................................................................................................8 Recommended Operation Conditions............................................................................................................9 Static Characteristics.......................................................................................................................................9 Dynamic Characteristics................................................................................................................................10 Integrated Components .................................................................................................................................11 Characteristics................................................................................................................................................12 Test Circuits ....................................................................................................................................................14 Package Outline:.............................................................................................................................................16 Package data...................................................................................................................................................16
Datasheet
3/16
Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Control integrated Power System
Two Phase switched Reluctance 600V / 15A @ 80C
Features
* fully isolated package * Infineon Trenchstop IGBTs with lowest VCE(sat) * optimal adapted Emcon diode for low EMI * SOI gate driver with boot strap diode and capacitor (4.4 F) * rugged SOI gate driver technology with stability against transient and negative voltage * temperature monitor and over temperature shutdown * undervoltage lockout at all channels * matched propagation delay for all channels * shunt for current measurement integrated * lead-free terminal plating; RoHS compliant * qualified according to JEDEC1 (high temperature stress tests for 1000h) for target applications
Description
CIPOSTM module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. This module is designed to control two phase switched reluctance motors in variable speed drives for applications like vacuum cleaners. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. The features of Infineon TrenchStop(R) IGBTs and diodes are combined with a new optimized Infineon SOI gate driver for excellent electrical performance.
Certification
UL 1577 (UL file E314539)
System configuration
* 2 Phases in asymmetric halfbridge topology IGBT + FW-diodes, * SOI gate driver * Shunt resistor for current measurement * Bootstrap diodes for high side supply * Integrated 4.4 F bootstrap capacitance * temp.sensor * Isolated heatsink * creepage distances typ. 3.2 mm
Typical Application
* Two Phase Switched Reluctance Drives
1
J-STD-020 and JESD-022 4/16 Rev. 2.3, May 2009
Datasheet
CIPOSTM IHCS22R60CE
Internal Electrical Schematic
Vb (5)
TAh DAh TBh DBh
LA1 (7) LA2 (9) LB1 (11) LB2 (13)
TAI DBI TBI
DAI
GND_Rsh1 (15)
Rsh
RH1 CbsA1 CbsA2
RL1
RH2
RL2
Dbs1 Dbs2
CbsB1 CbsB2
Rbs1 Rbs2
VDD (22) /AHIN (18) /BHIN (19)
nc.
VDD /HIN1 /HIN2 /HIN3 /LIN2 /LIN1 /LIN3
Driver-IC
/ALIN (17) /BLIN (20)
nc.
RRCin
COM-Rsh2 (16) EN (23)
see section integrated components" for further specification
CVCC RTS
Rt(24)
VSS (21)
Figure 1: Internal Schematic
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Pin Assignment
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 GND-sh1 Rsh2-COM /ALIN /AHIN /BHIN /BLIN VSS VDD EN Rt LB2 LB1 LA2 LA1 V+ Name n.c. n.c. n.c. n.c. Positive Bus Input Voltage n.c. Output Terminal 1 Phase A n.c. Output Terminal 2 Phase A n.c. Output Terminal 1 Phase B n.c. Output Terminal 2 Phase B n.c. Negative Bus Input Voltage / Connection of internal Shunt Current measurement Signal, Reference of Low Side Gate Drive Control Signal for Low Side Transistor of Phase A Control Signal for High Side Transistor of Phase A Control Signal for High Side Transistor of Phase B Control Signal for Low Side Transistor of Phase B Control Reference Signal Control supply terminal Enable Control Terminal Temperature read-out Terminal Description
Pin Description
/AHIN, /ALIN, /BHIN and /BLIN (low side and high side control pins, Pin 17 - 20) These pins are active low and they are responsible for the control of the integrated IGBT. The Schmitt-trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-up resistor of about 75 kOhm is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses.
The noise filter suppresses control pulses which are below the filter time tFILIN. The filter acts according to Figure E for other short signals ranges tFILIN1 and tFILIN2. It is recommended for proper work of CiPoSTM not
Figure 2: Input pin structure Datasheet 6/16 Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
to provide input pulse-width lower than 1us. The integrated gate drive provides shoot through prevention capability which avoids the simultaneous on-state of a pair of gate outputs of the same number (i.e. HO1 and LO1, HO2 and LO2 of driver IC). A minimum deadtime insertion of typ 380ns is also provided in these pairs, in order to reduce crossconduction of the external power switches. EN (enable, Pin 23) The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW logic level. The internal structure of the pin is the same as Figure 2 made exception of the switching levels of the Schmitt-Trigger, which are here VEN,TH+ = 2.1 V and VEN,TH- = 1.3 V. The typical propagation delay time is tEN = 900 ns. VDD, VSS (control side supply and reference, Pin 22, 23) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground as well as the under-voltage detection circuit. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1 V is at least present. The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 10.4 V according to Figure 3. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter/source voltage. Due to the low power consumption, the floating driver stage is supplied by an integrated bootstrap circuit connected to VDD. This includes integrated bootstrap capacitors of 4.4F at each floating supply, which are located very close to the gate drive circuit. VS1,2,3 provide a high robustness against negative voltage in respect of VSS of -50 V. This ensures very stable designs even under rough conditions. GND_Rsh1 (low side anode - Shunt reference, Pin 15) and COM_Rsh2 (Shunt signal)
Figure 3: Operation modes The emitters of the low side IGBT are connected to the shunt resistor. They are also connected to pin GND_Rsh2, which is the shunt signal. The low side anodes of the integrated diodes are connected directly to GND_Rsh1, so that only the transistor current of TAl and TBl contribute to the voltage drop over the shunt. V+ (positive bus input voltage, Pin 10) The high side IGBT are connected to the bus voltage. It is recommended, that the bus voltage does not exceed 500 V. Rt (Temperature sense output) A NTC-resistor is integrated with a resistance of 100kOhm at 25C and a B-constant of B = 4250 K
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Absolute Maximum Ratings
(TJ = 25C, VDD = 15V Unless Otherwise Specified):
Module section
Description Storage temperature range Operating temperature Control PCB Solder temperature Insulation test voltage Mounting torque
1
Condition
Symbol Tstg TPCB
Value -40 ... 125 125C 260 2500 0.6
Unit C
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Tsol VISOL MS
RMS, f = 50Hz, t = 1 min M3 screw
V Nm
IGBT and Diode Section
Description Max. Blocking Voltage DC Output current IGBT DC Output current Diode Repetitive IGBT peak collector current Repetitive Diode peak collector current Short circuit withstand time Power dissipation per IGBT Operating junction temperature range Single thermal resistance, junctioncase IGBT Diode Tc = 25 C, TvJ<150C Tc = 80 C, TvJ<150C Tc = 25 C, TvJ<150C Tc = 80 C, TvJ<150C Tp limited by TvJmax. Tp limited by TvJmax. VDC = 400V, TvJ =150C Tc = 25C Condition Symbol VCES IC IF ICRM IFRM tsc Ptot TvjI ,TvjD RthJC RthJCD Value 600 21.6 15 17 10 45 30 5 65 -40 ... 150 2.1 3.6 Unit V A A A A s W C K/W
Control section
Description Condition Symbol Value Min Module supply voltage high side floating IC supply offset voltage Input Voltage Operating junction temperature2 Max. switching frequency tp < 500 ns /ALIN, /AHIN, /BLIN, /BHIN, EN Vin TJ,IC fPWM VDD VS1,2,3 -1 VDD-VBS-6 VDD-VBS-50 -1 max 20 600 10 125 10 kHz V V V Unit
1 2
Monitored by pin 24 Monitored by pin 24 8/16 Rev. 2.3, May 2009
Datasheet
CIPOSTM IHCS22R60CE
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified. Parameter High side floating supply offset voltage High side floating supply voltage (VB vs. VS) High side output voltage (VHO vs. VS) Low side power supply Logic input voltages LIN,HIN,EN,ITRIP Symbol VS VBS VHO VDD VIN min. -3 12.5 0 12.5 0 max. 500 17.5 VBS 17.5 5 V Unit
Static Characteristics
(Tc = 25C, VDD = 15V, if not stated otherwise) Description Collector-Emitter breakdown voltage Collector-emitter saturation voltage Condition VGE = 0V, IC=0.25mA Iout = +/-15A TvJ = 25C TvJ = 150C VIN = 5V, Iout = +/-10A TvJ = 25C TvJ = 150C /ALIN, /AHIN, /BLIN, /BHIN /ALIN, /AHIN, /BLIN, /BHIN Symbol V(BR)CES min 600 1.7 0.7 1.9 1.1 11.0 9.5 1.2 9.0 Typ 1.65 1.9 1.65 1.6 2.1 0.9 2.1 1.3 12.1 10.4 1.7 10.1 55 110 62 max 2.15 Unit V V
VCE(sat)
Diode forward voltage
VF
2.05 2.4 1.1 2.3 1.5 12.8 11.0 13 100 200 120
V
Logic "0" input voltage Logic "1" input voltage EN positive going threshold EN negative going threshold VDD and VBS supply undervoltage positive going threshold VDD and VBS supply undervoltage negative going threshold VCC and VBS supply undervoltage lockout hysteresis Input clamp voltage Input bias current Input bias current EN Input bias current
VIH VIL VEN,TH+ VEN,THVDDUV+ VBSUV+ VDDUVVBSUVVDDUVH VBSUVH
V V V V V V V V A A A
IIN = 4mA; /ALIN, /AHIN, /BLIN, /BHIN, EN VIN = 5V VIN = 0V VEN = 5V
VINCLAMP ILIN+ IHIN+ ILINIHINIEN+
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Dynamic Characteristics
(Tc = 25C, VDD = 15V, if not stated otherwise) Description Turn-on propagation delay High side or low side Turn-on rise time High side or low side Turn-off propagation delay High side or low side Turn-off fall time High side or low side Shutdown propagation delay ENABLE Input filter time at LIN for turn on and off and input filter time at HIN for turn on only Input filter time 1 at /AHIN, /BHIN for turn off Input filter time 2 at /AHIN, /BHIN for turn off Input filter time EN IGBT Turn-on Energy Iout = 15A, VDC=300V Tvj = 25C Tvj = 150C Iout = 15A, VDC=300V Tvj = 25C Tvj = 150C Iout = 10A, VDC=300V Tvj = 25C Tvj = 150C Condition VLIN,HIN = 0V; Iout = 15A, VDC = 300V Iout = 15A, VDC = 300V VLIN,HIN = 5V VLIN,HIN = 5V; Iout = 15A, VDC = 300V Iout = 15A, VDC = 300V VLIN,HIN = 0V VEN = 0V VLIN,HIN= 0 V & 5V Symbol td(on) tr td(off) tf tEN tFILIN min 120 typ 656 40 1051 32.4 900 270 max Uni t ns ns ns ns ns ns
VHIN = 5V VHIN = 5 V
tFILIN1 tFILIN2 tFILEN Eon
300 -
220 400 430 0.70 0.85 0.36 0.43 0.05 0.12
-
ns ns ns mJ
IGBT Turn-off Energy
Eoff Erec -
mJ
Diode recovery Energy
mJ
Datasheet
10/16
Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Integrated Components
Description Integrated Resistor Shunt Resistor Integrated Capacitor Integrated Bootstrap Capacitor Condition Symbol Rbs1, Rbs2 Rsh CVCC CbsA1, CbsA2, CbsB1, CbsB2 TNTC = 25C RTS B Tj = 25C, IF = 1 A Tj = 25C, IF = 1 A VFbs trrbs min typ 10 5 0.1 2.2 max Unit m F
Resistance of NTC B-constant of NTC Forward Voltage of Bootstrap Diode Reverse Recovery of Bootsstrap Diode
-
100 4250 1.3 50
-
k K V ns
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Characteristics
(Tc = 25C, VDD = 15V, if not stated otherwise)
1000ns td(on) td(off)
10mJ Eon
E, SWITCHING ENERGIES
t, SWITCHING TIMES
Eoff 1mJ
tr 100ns
tf
0.1mJ
10ns 0A 10A 20A 30A 40A
0A 10A 20A 30A 40A
IC, COLLECTOR CURRENT Figure 4. Typical switching times as a function of collector current (inductive load, TvJ=150C, VCE = 300V Dynamic test circuit in Figure E)
IC, COLLECTOR CURRENT Figure 5. Typical switching energies as a function of collector current (inductive load, TvJ = 150C, VCE= 300V Dynamic test circuit in Figure E)
Eon
Eoff
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.25mJ
0.40mJ Eon
1.00mJ Eoff 0.75mJ
0.20mJ
0.50mJ
Erec
0.25mJ
Erec
0.00mJ 25C 50C 75C 100C 125C
0.00mJ 0A 5A 10A 15A 20A 25A 30A 35A 40A
IC, COLLECTOR CURRENT Figure 6. Typical switching energy losses as a function of collector current (inductive load, TvJ = 150C, VCE = 300V Dynamic test circuit in Figure A)
TvJ, JUNCTION TEMPERATURE Figure 7. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A)
Datasheet
12/16
Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
40A
1000kOhm
VGE=25C 35A 125C 150C
IC, COLLECTOR CURRENT
min typ max 0C 25C 50C 75C 100C
RTS, NTC RESISTANCE
30A 25A 20A 15A 10A 5A 0A
100kOhm
10kOhm
1kOhm -25C
0V
1V
2V
3V
TC, CASE TEMPERATURE Figure 8. Typical NTC characteristic as a function of NTC temperature
VCE, COLLECTOR EMITTER VOLTAGE Figure 9. Typical IGBT output characteristic (VDD = 15V)
25A
IF, forward CURRENT
20A
15A
10A VGE=25C 5A 125C 150C
0A 0V 1V 2V
VF, forward VOLTAGE Figure 10. Typical diode forward current as a function of forward voltage
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Test Circuits
Erec = vD i F dt
0
t Erec
Figure A: Dynamic test circuit Leakage inductance L =180nH Stray capacitance C =39pF
Figure B: Definition of diodes switching characteristics
Figure C: Definition of Enable propagation delay
t Eoff
Eoff =
v
0
CEx
i Cx dt
Eon = vCEx i Cx dt
0
t Eon
Figure D: Switching times definition and switching energy definition
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
tFILIN HIN LIN
tFILIN
LIN
on
off
on
off
high LO HO LO low
Figure E: Short Pulse suppression
Datasheet
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Rev. 2.3, May 2009
CIPOSTM IHCS22R60CE
Package Outline:
Package data
Description Mounting Torque Mounting pressure on surface M3 screw Package flat on mounting surface Condition Symbol MS NMC min typ 0.5 max 0.6 150 Unit Nm N/mm
Datasheet
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Rev. 2.3, May 2009

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